The STL7NM60N is a 600 V, 0.805 Ω, 5.8 A N-channel power MOSFET silkscreen marked 7NM60N. This revolutionary power MOSFET associates a vertical structure with a striped layout, resulting in one of the lowest on-resistance and gate charges in the world. It is suitable for the most demanding high-efficiency converters.

STL7NM60N parameter:

FET Type: N-channel

Technology: MOSFET (Metal Oxide)

Drain to source voltage (Vdss): 600 V

Current - continuous drain (Id) @ 25°C: 5.8A (Tc)

Drive voltage (Max Rds On, Min Rds On): 10V

Rds on (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id: 4V @ 250µA

Gate charge (Qg) (Max) @ Vgs: 14 nC @ 10 V

Vgs (Max): ±25V

Input capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V

Power dissipation (Max): 68W (Tc)

Operating temperature: -55°C ~ 150°C (TJ)

Feature:

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance